Effect of overgrowth temperature on shape, strain, and composition of buried Ge islands deduced from x-ray diffraction
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1565695
Reference13 articles.
1. Composition of self-assembled Ge/Si islands in single and multiple layers
2. SiGe intermixing in Ge/Si(100) islands
3. Embedding of Nanoscale 3D SiGe Islands in a Si Matrix
4. Effect of overgrowth temperature on the photoluminescence of Ge/Si islands
5. Strain and composition of capped Ge/Si self-assembled quantum dots grown by chemical vapor deposition
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