Effect of overgrowth temperature on the photoluminescence of Ge/Si islands
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1318729
Reference14 articles.
1. Island formation during growth of Ge on Si(100): A study using photoluminescence spectroscopy
2. Photoluminescence study of the initial stages of island formation for Ge pyramids/domes and hut clusters on Si(001)
3. Photoluminescence Study of the 2D-3D Growth Mode Changeover for Different Ge/Si Island Phases
4. Embedding of Nanoscale 3D SiGe Islands in a Si Matrix
5. Si overgrowth of self-assembled Ge clusters on Si(001) — a scanning tunnelling microscopy study
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