Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4859915
Reference34 articles.
1. Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study
2. An electrically injected InAs/GaAs quantum-dot photonic crystal microcavity light-emitting diode
3. Quantum Information Processing Using Quantum Dot Spins and Cavity QED
4. Structure of droplet-epitaxy-grown InAs/GaAs quantum dots
5. Composition of the “GaAs” quantum dot, grown by droplet epitaxy
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1. Epitaxial Growth of Semiconductor Quantum Dots: An Overview;Journal of Molecular and Engineering Materials;2023-06-30
2. Nucleation of Ga droplets self-assembly on GaAs(111)A substrates;Scientific Reports;2021-03-25
3. Droplet-induced dot, dot-in-hole, and hole structures in GaGe thin films grown by MOCVD on GaAs substrates;CrystEngComm;2016
4. On Improving Accuracy of Finite-Element Solutions of the Effective-Mass Schrödinger Equation for Interdiffused Quantum Wells and Quantum Wires;Communications in Theoretical Physics;2016-01-01
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