Author:
Regolini J. L.,Sigmon T. W.,Gibbons J. F.
Subject
Physics and Astronomy (miscellaneous)
Cited by
31 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Theory of the screened Coulomb field generated by impurity ions in semiconductors;Physical Review B;2006-04-19
2. Kinetics of arsenic-enhanced solid phase epitaxy in silicon;Journal of Applied Physics;2004-04-15
3. Higher moments of the implanted-ion profiles of bismuth in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-06
4. Analysis of depth profiles of implanted lead ions in silicon;Applied Physics A: Materials Science & Processing;1998-09-01
5. Skewness of implanted ion profiles;Radiation Effects and Defects in Solids;1998-01