Higher moments of the implanted-ion profiles of bismuth in silicon-Reference-Cited by-同舟云学术

Higher moments of the implanted-ion profiles of bismuth in silicon

Published:1999-06 Issue:1-4 Volume:153 Page:436-441
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Liang J.H.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference39 articles.

1. Ion Bombardment Modification of Surfaces,1984

2. Ion Plating and Implantation,1986

3. Analysis and Simulation of Semiconductor Devices;Selberherr,1984

4. Ion Implantation Range and Energy Deposition Distributions, vol. 2;Winterbon,1975

5. Systems of Frequency Curves;Elderton,1969

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

4. Implantation and post-annealing characteristics when impinging small Bn clusters into silicon at low fluence;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2005-01

5. Range parameters of Bn cluster ion implantation in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-06