Kinetics of arsenic-enhanced solid phase epitaxy in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1682672
Reference20 articles.
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3. Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion implantation
4. Near‐surface regrowth rate effects in high‐dose ion‐implanted (100) silicon
5. Kinetics of solid phase crystallization in amorphous silicon
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