Characteristics of leakage current in the dielectric layer due to Cu migration during bias temperature stress-Reference-Cited by-同舟云学术

Characteristics of leakage current in the dielectric layer due to Cu migration during bias temperature stress

Published:2008-08-15 Issue:4 Volume:104 Page:044511
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Hwang Sang-Soo,Jung Sung-Yup,Joo Young-Chang

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2973154

Reference9 articles.

1. Reliability analysis method for low-k interconnect dielectrics breakdown in integrated circuits

2. G. Barbotine and A. Vapaille, Instabilities in Silicon Devices: Silicon Passivation and Related Instabilities (North-Holland, Amsterdam, 1991), Vol. 1, p. 303.

3. Investigation of electrical conduction in carbon-doped silicon oxide using a voltage ramp method

4. Field-enhanced Si–Si bond-breakage mechanism for time-dependent dielectric breakdown in thin-film SiO2 dielectrics

5. Hot hole induced breakdown of thin silicon dioxide films

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