Hot hole induced breakdown of thin silicon dioxide films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120474
Reference4 articles.
1. Substrate hole current and oxide breakdown
2. Dielectric breakdown caused by hole-induced-defect in thin SiO2 films
3. Investigation on the oxide field dependence of hole trapping and interface state generation in SiO2layers using homogeneous nonavalanche injection of holes
4. Generation and relaxation phenomena of positive charge and interface trap in a metal‐oxide‐semiconductor structure
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