Generation and relaxation phenomena of positive charge and interface trap in a metal‐oxide‐semiconductor structure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359445
Reference55 articles.
1. Hot-electron-induced MOSFET degradation—Model, monitor, and improvement
2. Model for the generation of positive charge at the Si-SiO2interface based on hot-hole injection from the anode
3. Hot-carrier-injected oxide region and hot-electron trapping as the main cause in Si nMOSFET degradation
4. Logarithmic detrapping response for holes injected into SiO2and the influence of thermal activation and electric fields
5. Hole Currents in Thermally Grown SiO2
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Model for Charge Accumulation in n- and p-MOS Transistors during Tunneling Electron Injection from a Gate;Semiconductors;2018-05-15
2. Atomic-layer-deposited silicon-nitride/SiO2 stack––a highly potential gate dielectrics for advanced CMOS technology;Microelectronics Reliability;2002-12
3. Soft-breakdown-suppressed ultrathin atomic-layer-deposited silicon–nitride/SiO2 stack gate dielectrics for advanced complementary metal–oxide–semiconductor technology;Applied Physics Letters;2001-11-19
4. OXIDE WEAROUT, BREAKDOWN, AND RELIABILITY;International Journal of High Speed Electronics and Systems;2001-09
5. Hole trapping and trap generation in the gate silicon dioxide;IEEE Transactions on Electron Devices;2001-06
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3