Soft-breakdown-suppressed ultrathin atomic-layer-deposited silicon–nitride/SiO2 stack gate dielectrics for advanced complementary metal–oxide–semiconductor technology-Reference-Cited by-同舟云学术

Soft-breakdown-suppressed ultrathin atomic-layer-deposited silicon–nitride/SiO2 stack gate dielectrics for advanced complementary metal–oxide–semiconductor technology

Published:2001-11-19 Issue:21 Volume:79 Page:3488-3490
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Khosru Quazi Deen Mohd,Nakajima Anri,Yoshimoto Takashi,Yokoyama Shin

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1420586

Reference10 articles.

1. A function-fit model for the soft breakdown failure mode

2. Soft breakdown of ultra-thin gate oxide layers

3. Electrical stress-induced variable range hopping conduction in ultrathin silicon dioxides

4. Soft breakdown in ultrathin gate oxides: Correlation with the percolation theory of nonlinear conductors

5. Atomic-layer-deposited silicon-nitride/SiO2 stacked gate dielectrics for highly reliable p-metal–oxide–semiconductor field-effect transistors

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: Current status and future outlook;Journal of Vacuum Science & Technology A;2019-12

2. Growth and electrical properties of atomic-layer deposited ZrO2/Si-nitride stack gate dielectrics;Journal of Applied Physics;2004-01-15

3. Atomic-layer-deposited silicon-nitride/SiO2 stack––a highly potential gate dielectrics for advanced CMOS technology;Microelectronics Reliability;2002-12

4. Atomic-layer deposition of ZrO2 with a Si nitride barrier layer;Applied Physics Letters;2002-10-07

5. Low-temperature formation of highly reliable silicon-nitride gate dielectrics with suppressed soft-breakdown phenomena for advanced complementary metal–oxide–semiconductor technology;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002