Soft breakdown in ultrathin gate oxides: Correlation with the percolation theory of nonlinear conductors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121918
Reference12 articles.
1. Modeling and characterization of gate oxide reliability
2. Soft breakdown of ultra-thin gate oxide layers
3. Electrical stress-induced variable range hopping conduction in ultrathin silicon dioxides
4. Percolation Theory of Nonlinear Circuit Elements
5. Percolation theory for nonlinear conductors
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