The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs

Author:

Millesimo M.1ORCID,Borga M.2ORCID,Bakeroot B.3ORCID,Posthuma N.2ORCID,Decoutere S.2ORCID,Sangiorgi E.1ORCID,Fiegna C.1,Tallarico A. N.1ORCID

Affiliation:

1. Department of Electrical, Electronic and Information Engineering, Advanced Research Center on Electronic System, University of Bologna, Cesena, Italy

2. imec, Leuven, Belgium

3. Centre for Microsystems Technology, imec and Ghent University, Ghent, Belgium

Funder

Intelligent Reliability 4.0 (iRel40 is a European co-funded innovation project that has been granted by the ECSEL Joint Undertaking

Horizon 2020 Research Program and participating countries

national funding provided by Germany, including the Free States of Saxony and Thuringia, Austria, Belgium, Finland, France, Italy, The Netherlands, Slovakia, Spain, Sweden, and Turkey

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime;IEEE Electron Device Letters;2024-09

2. Performance Instability of 650 V p-GaN Gate HEMTs under Temperature-Induced Negative Gate Bias Stresses;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17

3. Gate Robustness and Reliability of P-Gate GaN HEMT Evaluated by a Circuit Method;IEEE Transactions on Power Electronics;2024-05

4. Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

5. Transient simulations and theoretical modeling of near-junction heat conduction in GaN-on-diamond HEMT;Microelectronics Reliability;2024-01

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