Growth of GaAs on hydrogen‐fluoride treated Si (100) surfaces using migration‐enhanced epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107240
Reference16 articles.
1. GaAs‐on‐Si: Improved growth conditions, properties of undoped GaAs, high mobility, and fabrication of high‐performance AlGaAs/GaAs selectively doped heterostructure transistors and ring oscillators
2. Epitaxial GaAs on Si: Progress and Potential Applications
3. Low-temperature Si and Si:Ge epitaxy by ultrahigh-vacuum/chemical vapor deposition: Process fundamentals
4. Dependence of residual damage on temperature during Ar+sputter cleaning of silicon
5. Gas source silicon molecular beam epitaxy using silane
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1. Liquid-phase epitaxial lateral overgrowth of GaAs on 0.3 °-misoriented epitaxial Si substrates;Materials Chemistry and Physics;1995-12
2. Molecular beam epitaxy of gallium arsenide on 0.3°-misoriented epitaxial Si substrates;Journal of Crystal Growth;1995-11
3. Surface Electronic Properties of Electrolytically Hydrogen Terminated Si(111);Journal of The Electrochemical Society;1994-12-01
4. Low temperature GaAs epitaxial growth on Si(100) by molecular beam epitaxy and the post-growth rapid thermal annealing;Journal of Crystal Growth;1994-02
5. Electronic properties of the HF-passivated Si(111) surface during the initial oxidation in air;Physica Status Solidi (a);1993-12-16
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