Low-temperature Si and Si:Ge epitaxy by ultrahigh-vacuum/chemical vapor deposition: Process fundamentals
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Published:1990-11
Issue:6
Volume:34
Page:806-815
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ISSN:0018-8646
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Container-title:IBM Journal of Research and Development
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language:
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Short-container-title:IBM J. Res. & Dev.
Subject
General Computer Science
Cited by
66 articles.
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