Amorphous thin film TaWSiC as a diffusion barrier for copper interconnects
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4813396
Reference13 articles.
1. Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions
2. Diffusion barrier property of TaN between Si and Cu
3. Diffusion barrier performance of chemically vapor deposited TiN films prepared using tetrakis‐dimethyl‐amino titanium in the Cu/TiN/Si structure
4. Diffusion barrier properties of amorphous and nanocrystalline Ta films for Cu interconnects
5. Tantalum‐based diffusion barriers in Si/Cu VLSI metallizations
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