Thermal stability of AlCrTaTiZrMo-nitride high entropy film as a diffusion barrier for Cu metallization-Reference-Cited by-同舟云学术

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Thermal stability of AlCrTaTiZrMo-nitride high entropy film as a diffusion barrier for Cu metallization

Published:2019-01 Issue: Volume:773 Page:482-489
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Li Rongbin,Li Minxu,Jiang Chunxia,Qiao Bangwei,Zhang Weiwei,Xu Jie

Funder

National Nature Science Foundation of China

Nature Science Foundation of Shanghai

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference35 articles.

1. Damascene copper electroplating for chip interconnections;Andricacos;IBM J. Res. Dev.,1998

2. Copper metallization for high performance silicon technology;Rosenberg;Annu. Rev. Mater. Sci.,2000

3. Barrier capability of Zr–N films with different density and crystalline structure in Cu/Si contact systems;Wang;Mater. Lett.,2008

4. Electroless deposition of NiCrB diffusion barrier layer film for ULSI-Cu metallization;Wang;Appl. Surf. Sci.,2017

5. Structural and electrical characterization of CoNiO monolayer as copper diffusion barrier in integrated circuits;Sharma;Mater. Sci. Semicond. Process.,2016

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