Electrothermal performance limit of β-Ga2O3 field-effect transistors
Author:
Affiliation:
1. School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5116828
Reference17 articles.
1. 1-kV vertical Ga2O3 field-plated Schottky barrier diodes
2. Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V
3. J. Noh , M. Si , H. Zhou , M. J. Tadjer , and P. D. Ye , in Proceedings of the 2018 76th Device Research Conference (2018), pp. 1–2.
4. Figure of merit for semiconductors for high-speed switches
5. New Unipolar Switching Power Device Figures of Merit
Cited by 27 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Amorphous Ga2O3-based solar-blind photodetectors on crystalline and amorphous substrates: A comparative study;Materials Science in Semiconductor Processing;2024-08
2. An analytical model of P SiC core-shell JLFETs to analyze the performance for higher breakdown voltages applications;Micro and Nanostructures;2024-07
3. Significant phonon localization and suppressed transport in silicon-doped gallium oxide: A study using a unified neural network interatomic potential;Journal of Materiomics;2024-07
4. A temperature dependent drain current model of P+ SiC GAA JLFETs for enhanced analog/RF performance;Micro and Nanostructures;2024-04
5. An analytical model for P+ pocket SiC gate all around Junctionless field effect transistor with impact of high temperature;Micro and Nanostructures;2023-10
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3