An analytical model for P+ pocket SiC gate all around Junctionless field effect transistor with impact of high temperature
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Biomaterials
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1. An analytical model of P SiC core-shell JLFETs to analyze the performance for higher breakdown voltages applications;Micro and Nanostructures;2024-07
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