An analytical model of P SiC core-shell JLFETs to analyze the performance for higher breakdown voltages applications-Reference-Cited by-同舟云学术

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An analytical model of P SiC core-shell JLFETs to analyze the performance for higher breakdown voltages applications

Published:2024-07 Issue: Volume:191 Page:207868
ISSN:2773-0123
Container-title:Micro and Nanostructures
language:en
Short-container-title:Micro and Nanostructures

Author:

Azam Zahied^ORCID,Kumar Ashok

Publisher

Elsevier BV

Reference37 articles.

1. Performance estimation of junctionless multigate transistors;Lee;Solid State Electron.,2010

2. Junctionless multigate field-effect transistor;Lee;Appl. Phys. Lett.,2009

3. Nanowire transistors without junctions;Colinge;Nature Nanotechnol,2010

4. Improving graphene/4H-SiC/graphene MSM UV photodetector sensitivity using interdigitated electrodes formalism and embedded gold plasmonic nanoparticles;Bencherif;Opt Laser. Technol.,2022

5. Multiobjective optimization of design of 4H-SiC power MOSFETs for specific applications;Bencherif;J. Electron. Mater.,2019

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