Understanding the stress effect of TiN top electrode on ferroelectricity in Hf0.5Zr0.5O2 thin films

Abstract

We conducted a comprehensive investigation on the influence of TiN thickness and stress on the ferroelectric properties of Hf0.5Zr0.5O2 thin films. TiN top electrode layers with varying thicknesses of 2, 5, 10, 30, 50, 75, and 100 nm were deposited and analyzed. It was observed that the in-plane tensile stress in TiN films increased with the thickness of the TiN top electrode. This is expected to elevate the tensile stress in the Hf0.5Zr0.5O2 film, consequently leading to an enhancement in ferroelectric polarization. However, the effect of stress on the ferroelectric behavior of Hf0.5Zr0.5O2 films exhibited distinct stages: improvement, saturation, and degradation. Our study presents novel findings revealing a saturation and degradation phenomenon of in-plane tensile stress on the ferroelectric properties of polycrystalline Hf0.5Zr0.5O2 films, thereby partially resolving the discrepancies between experimental observations and theoretical predictions. The observed phase transformation induced by tensile stress in Hf0.5Zr0.5O2 films played a crucial role in these effects. Furthermore, we found that the impact of the TiN top electrode thickness on other factors influencing ferroelectricity, such as grain size and oxygen vacancies, was negligible. These comprehensive results offer valuable insights into the influence of stress and TiN top electrode thickness on the ferroelectric behavior of Hf0.5Zr0.5O2 films.