Theoretical specific resistance of ohmic contacts ton‐GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346126
Reference11 articles.
1. Implant and annealed ohmic contact to a thin quantum well
2. Low‐resistance nonspiking ohmic contact for AlGaAs/GaAs high electron mobility transistors using the Ge/Pd scheme
3. Delta‐doped ohmic contacts ton‐GaAs
4. Specific contact resistance of metal-semiconductor barriers
5. Low‐resistance nonalloyed ohmic contacts to Si‐doped molecular beam epitaxial GaAs
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Contact Resistance of SnO2Films Determined by the Transmission Line Model Method;Japanese Journal of Applied Physics;1998-06-15
2. Influence of metal/n‐InAs/interlayer/n‐GaAs structure on nonalloyed ohmic contact resistance;Journal of Applied Physics;1994-11
3. Contact resistance measurements onp‐type 6H‐SiC;Applied Physics Letters;1993-01-25
4. Specific resistivity of ohmic contacts ton‐type direct band‐gap III‐V compound semiconductors;Journal of Applied Physics;1991-07
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