Low‐resistance nonspiking ohmic contact for AlGaAs/GaAs high electron mobility transistors using the Ge/Pd scheme
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101032
Reference9 articles.
1. Alloyed ohmic contacts to GaAs
2. Structure and lateral diffusion of ohmic contacts in AlGaAs/GaAs high electron mobility transistors and GaAs devices
3. HEMT with nonalloyed ohmic contacts using n+-InGaAs cap layer
4. Nonalloyed ohmic contacts ton‐GaAs by solid‐phase epitaxy of Ge
5. An investigation of a nonspiking Ohmic contact to n-GaAs using the Si/Pd system
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