Contact Resistance of SnO2Films Determined by the Transmission Line Model Method
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Monolithic 3-terminal perovskite/silicon HBT-based tandem compatible with both-side contact silicon cells: a theoretical study;EPJ Photovoltaics;2023
2. Improvement of the electrical properties of the frontal contact in CdS/CdTe solar cells;Materials Research Express;2017-10-24
3. Forming ohmic Ag/SnO2 contacts;Materials Letters;2015-02
4. Study of the Au Schottky contact formation on oxygen plasma treated n-type SnO2 (101) thin films;Journal of Applied Physics;2010-02
5. Non-Alloyed Schottky and Ohmic Contacts to As-Grown and Oxygen-Plasma Treated n-Type SnO2(110) and (101) Thin Films;Applied Physics Express;2009-10-16
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