Metastable behavior of deep levels in hydrogenated GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105056
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1. Stability of the GaAs based Hall sensors irradiated by gamma quanta;IOP CONF SER-MAT SCI;2015
2. A comparison of the M3/M4 metastable defect detected in hydrogen and ICP Ar plasma treated n-GaAs;Physica B: Condensed Matter;2012-05
3. One more deep level related to the metastable hydrogen-related defects in n-GaAs epilayers;Physica B: Condensed Matter;2009-12
4. Electrical characteristics of the hydrogen pre-annealed Au/n-GaAs Schottky barrier diodes as a function of temperature;Applied Surface Science;2007-06
5. Properties of metastable hydrogen-related defects in n-type GaAs studied by isothermal deep-level transient spectroscopy;Journal of Applied Physics;2000-08-15
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