Properties of metastable hydrogen-related defects in n-type GaAs studied by isothermal deep-level transient spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1305929
Reference18 articles.
1. New metastable defects in GaAs
2. Electrical and optical characterization of metastable deep-level defects in GaAs
3. Creation of deep levels in horizontal Bridgman‐grown GaAs by hydrogenation
4. Metastable defects in GaAs grown by metalorganic chemical vapor deposition: Dependence on the V/III ratio
5. Metastable behavior of deep levels in hydrogenated GaAs
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