Electrical characteristics of the hydrogen pre-annealed Au/n-GaAs Schottky barrier diodes as a function of temperature-Reference-Cited by-同舟云学术

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Electrical characteristics of the hydrogen pre-annealed Au/n-GaAs Schottky barrier diodes as a function of temperature

Published:2007-06 Issue:17 Volume:253 Page:7246-7253
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Güllü Ö.,Biber M.,Duman S.,Türüt A.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference61 articles.

1. Surface preparation and effective contact formation for GaAs surface

2. Influence of hydrogen treatment and annealing processes upon the Schottky barrier height of Au/n-GaAs and Ti/n-GaAs diodes

3. The effect of Schottky metal thickness on barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky diodes

4. Metal–Semiconductor Contacts;Rhoderick,1988

5. Physics of Semiconductor Devices;Sze,1981

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4. Conduction Mechanisms in Au/0.8 nm–GaN/n–GaAs Schottky Contacts in a Wide Temperature Range;Materials;2021-10-09

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