One more deep level related to the metastable hydrogen-related defects in n-GaAs epilayers-Reference-Cited by-同舟云学术

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One more deep level related to the metastable hydrogen-related defects in n-GaAs epilayers

Published:2009-12 Issue:23-24 Volume:404 Page:5096-5098
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Soltanovich O.A.,Yakimov E.B.,Erofeev E.V.,Kagadei V.A.,Weber J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Hydrogen in Crystalline Semiconductors;Pearton,1992

2. Hydrogen in Semiconductors II, In: N.H. Nickel, (Ed.), Semiconductors and Semimetals, vol. 61, Academic Press, New York, 1999.

3. New metastable defects in GaAs

5. Role of the EL2 Center on the Formation of Metastable Hydrogen-related Defects (M3/M4) in n-GaAs

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defect and Impurity-Complex Depassivation During Electron-Beam Irradiation of GaAs;IEEE Transactions on Nuclear Science;2021-08

2. Metastable hydrogen-related defects in epitaxial n-GaAs studied by Laplace deep level transient spectroscopy;AIP Conference Proceedings;2014

3. Deep levels in H-irradiated GaAs1-xNx (x < 0.01) grown by molecular beam epitaxy;Journal of Applied Physics;2011-12-15

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