Mg-implanted bevel edge termination structure for GaN power device applications-Reference-Cited by-同舟云学术

Mg-implanted bevel edge termination structure for GaN power device applications

Published:2021-03-01 Issue:9 Volume:118 Page:093502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Matys Maciej¹^ORCID,Ishida Takashi¹,Nam Kyung Pil¹,Sakurai Hideki¹²,Narita Tetsuo³^ORCID,Uesugi Tsutomu¹,Bockowski Michal¹⁴^ORCID,Suda Jun¹^ORCID,Kachi Tetsu¹^ORCID

Affiliation:

1. Nagoya University, Nagoya 464-8601, Japan

2. ATI, ULVAC, Inc., Chigasaki, Kanagawa 253-8543, Japan

3. Toyota Central R&D Labs., Inc., Nagakute, Aichi 480-1192, Japan

4. Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland

Funder

Mext "Research and Development of Next-Generation Semiconductor to Realize Energy Saving Society"

Polish National Science Centre

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0039183

Reference34 articles.

1. 1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates

2. D. Shibata , R. Kajitani , M. Ogawa , K. Tanaka , S. Tamura , T. Hatsuda , M. Ishida , and T. Ueda , in IEEE International Electron Devices Meeting (IEDM) ( IEEE, 2016), p. 248.

3. 1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation

4. Demonstration of 1200 V/1.4 mΩ cm2 vertical GaN planar MOSFET fabricated by an all ion implantation process

5. The 2018 GaN power electronics roadmap

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