Time-dependent dielectric breakdown of plasma-exposed porous organosilicate glass-Reference-Cited by-同舟云学术

Time-dependent dielectric breakdown of plasma-exposed porous organosilicate glass

Published:2012-03-12 Issue:11 Volume:100 Page:112905
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Nichols M. T.,Sinha H.,Wiltbank C. A.,Antonelli G. A.,Nishi Y.,Shohet J. L.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3693526

Reference35 articles.

1. Plasma enhanced chemical vapor deposited SiCOH dielectrics: from low-kto extreme low-kinterconnect materials

2. Fracture toughness, adhesion and mechanical properties of low-K dielectric thin films measured by nanoindentation

3. K. Y. Yiang, H. W. Yao, A. Marathe, and O. Aubel, Proceedings of the 44th Annual International Reliability Physics Symposium (IEEE, Montreal, QC, 2009), pp. 476–480.

4. Plasma vacuum ultraviolet emission in an electron cyclotron resonance etcher

5. Absolute intensities of the vacuum ultraviolet spectra in a metal-etch plasma processing discharge

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive Review on the Impact of Chemical Composition, Plasma Treatment, and Vacuum Ultraviolet (VUV) Irradiation on the Electrical Properties of Organosilicate Films;Polymers;2024-08-05

2. Damage to OSG low‐ k films during IPVD deposition of the Ta barrier layer;Plasma Processes and Polymers;2022-12-22

3. Porous Low-Dielectric-Constant Material for Semiconductor Microelectronics;Nanofluid Flow in Porous Media;2020-08-19

4. A VLSI Majority-Logic Device Based on Spin Transfer Torque Mechanism for Brain-Inspired Computing Architecture;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2020-08

5. RC Benefits of Advanced Metallization Options;IEEE Transactions on Electron Devices;2019-05