Determination of complex dielectric functions of ion implanted and implanted‐annealed amorphous silicon by spectroscopic ellipsometry
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350587
Reference16 articles.
1. Effects of thermal annealing on the refractive index of amorphous silicon produced by ion implantation
2. Properties of amorphous silicon produced by ion implantation: Thermal annealing
3. Investigation of solid phase epitaxial regrowth on ion-implanted silicon by backscattering spectrometry and ellipsometry
4. Optical properties of thermally stabilized ion implantation amorphized silicon
5. Calorimetric evidence for structural relaxation in amorphous silicon
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