Author:
Kalas Benjamin,Zolnai Zsolt,Sáfrán György,Serényi Miklós,Agocs Emil,Lohner Tivadar,Nemeth Attila,Khánh Nguyen Quoc,Fried Miklós,Petrik Peter
Abstract
Abstract
The optical parameters of hydrogenated amorphous a-$$\hbox {Si}_{1-x}\,\hbox {Ge}_{{x}}$$
Si
1
-
x
Ge
x
:H layers were measured with focused beam mapping ellipsometry for photon energies from 0.7 to 6.5 eV. The applied single-sample micro-combinatorial technique enables the preparation of a-$$\hbox {Si}_{1-x}\,\hbox {Ge}_{{x}}$$
Si
1
-
x
Ge
x
:H with full range composition spread. Linearly variable composition profile was revealed along the 20 mm long gradient part of the sample by Rutherford backscattering spectrometry and elastic recoil detection analysis. The Cody-Lorentz approach was identified as the best method to describe the optical dispersion of the alloy. The effect of incorporated H on the optical absorption is explained by the lowering of the density of localized states in the mobility gap. It is shown that in the low-dispersion near infrared range the refractive index of the a-$$\hbox {Si}_{1-x}\,\hbox {Ge}_x$$
Si
1
-
x
Ge
x
alloy can be comprehended as a linear combination of the optical parameters of the components. The micro-combinatorial sample preparation with mapping ellipsometry is not only suitable for the fabrication of samples with controlled lateral distribution of the concentrations, but also opens new prospects in creating databases of compounds for optical and optoelectonic applications.
Funder
Hungarian Scientific Research Fund
era.net
Publisher
Springer Science and Business Media LLC
Cited by
12 articles.
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