Spectroscopic Ellipsometry Studies on Solution-Processed OLED Devices: Optical Properties and Interfacial Layers

Abstract

Τhe fabrication of organic light-emitting diodes (OLEDs) from solution involves the major problem of stack integrity, setting the determination of the composition and the characteristics of the resulting interfaces prerequisite for the optimization of the growth processes and the achievement of high devices’ performance. In this work, a poly(9,9-dioctylfluorene) (F8) and poly(9,9-dioctylfluorene-alt-benzothiadiazole) (F8BT) blend is used for the emissive layer (EML), poly-3,4-ethylene dioxythiophene; poly-styrene sulfonate (PEDOT:PSS) is used for a hole transport layer (HTL), and Poly(9,9-bis(3′-(N,N-dimethyl)-N-ethylammoinium-propyl-2,7-fluorene)-alt-2,7-(9,9-dioctylfluore-ne))dibromide (PFN-Br) for an electron transport layer (ETL) to produce the OLED device. All the layers are developed using the slot-die process, onto indium tin oxide (ITO)-coated polyethylene terephthalate (PET) flexible substrates, whereas Ag cathode was formed by ink-jet printing under ambient conditions. Spectroscopic ellipsometry measurements were performed upon completion of the successive films’ growth, in sequential steps, for the multilayer OLED development. Ellipsometry analysis using different models demonstrate the degree of intermixing within the layers and provide information about the interfaces. These interfacial properties are correlated with the emission characteristics as well as the final performance of the OLED devices.