Investigation of solid phase epitaxial regrowth on ion-implanted silicon by backscattering spectrometry and ellipsometry
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference14 articles.
1. Laser-Solid Interactions and Transient Thermal Processing of Materials;Olson,1983
2. Effects of thermal annealing on the refractive index of amorphous silicon produced by ion implantation
3. Infrared studies of isothermal annealing of ion‐implanted silicon: Refractive indices, regrowth rates, and carrier profiles
4. Properties of amorphous silicon produced by ion implantation: Thermal annealing
5. Amorphous Silicon Produced by Ion Implantation: Etching Rate in Solution and Effect of Annealing
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. ELLIPSOMETRIC CHARACTERIZATION OF THIN FILMS;Handbook of Surfaces and Interfaces of Materials;2001
2. Investigation of mis-estimation of structure of amorphous silicon films in ellipsometric modeling;Journal of Non-Crystalline Solids;2000-10
3. Non-destructive optical depth profiling and real-time evaluation of spectroscopic data;Thin Solid Films;2000-03
4. Chapter 1 Ellipsometric Analysis;Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization;1997
5. Optical dispersion relations in two types of amorphous silicon using Adachi’s expression;Physical Review B;1994-02-15
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