A combined single‐phonon Raman and photoluminescence study of direct and indirect band‐gap AlxGa1−xAs alloys grown by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342938
Reference47 articles.
1. Theory of excitonic photoluminescence linewidth in semiconductor alloys
2. Low‐temperature photoluminescence in AlxGa1−xAs grown by molecular beam epitaxy
3. Excitonic photoluminescence linewidths in AlGaAs grown by molecular beam epitaxy
4. Alloy broadening in photoluminescence spectra ofAlxGa1−xAs
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