Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diode-Reference-Cited by-同舟云学术

Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diode

Author:

Dong Hailiang¹²³⁴⁵,Sun Jing¹²³⁴⁵,Ma Shufang¹²³⁴⁵,Liang Jian¹²³⁴⁵,Lu Taiping¹²³⁴⁵,Jia Zhigang¹²³⁴⁵,Liu Xuguang⁶²⁴⁵,Xu Bingshe¹²³⁴⁵

Affiliation:

1. Key Laboratory of Interface Science and Engineering in Advanced Materials

2. Taiyuan University of Technology

3. Ministry of Education

4. Taiyuan

5. P. R. China

6. College of Chemistry and Chemical Engineering

Abstract

The effect of the height of the potential barrier on the confined level of carrier transport was studied in InGaAs/GaAsP MQWs.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

Reference77 articles.

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