Excitonic photoluminescence linewidths in AlGaAs grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96703
Reference12 articles.
1. Compositional Disorder-Induced Broadening for Free Excitons in II-VI Semiconducting Mixed Crystals
2. Alloy broadening in photoluminescence spectra ofAlxGa1−xAs
3. Molecular beam epitaxy growth of (Al, Ga)As/GaAs heterostructures
4. Identification of residual donors in high-purity epitaxial GaAs with the use of magneto-optical spectroscopy
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