Photoluminescence of high-quality AlGaAs layers grown by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125960
Reference19 articles.
1. Photoluminescence of AlxGa1−xAs alloys
2. Alloy broadening in photoluminescence spectra ofAlxGa1−xAs
3. A quantum statistical theory of linewidths of radiative transitions due to compositional disordering in semiconductor alloys
4. Excitonic photoluminescence linewidths in AlGaAs grown by molecular beam epitaxy
5. Extremely high-mobility two dimensional electron gas: Evaluation of scattering mechanisms
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2. Calculating the nonequilibrium carrier relaxation kinetics in AlGaAs;Bulletin of the Russian Academy of Sciences: Physics;2016-01
3. Effect of spin polarization of excitons on the energy spectra of GaAs/AlGaAs heterostructures;Optoelectronics, Instrumentation and Data Processing;2014-05
4. Effect of substrate misorientation on the material properties of GaAs/Al0.3Ga0.7As tunnel diodes;Applied Physics Letters;2010-12-06
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