Molecular beam epitaxy growth of (Al, Ga)As/GaAs heterostructures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices
2. Two-dimensional electron gas at a semiconductor-semiconductor interface
3. Dependence of electron mobility on spatial separation of electrons and donors in AlxGa1−xAs/GaAs heterostructures
4. High mobilities in AlxGa1−xAs‐GaAs heterojuntions
5. High mobility GaAs-AlxGa1−xAs single period modulation-doped heterojunctions
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1. Al-As-Ga (Aluminium-Arsenic-Gallium);Non-Ferrous Metal Systems. Part 1;2006
2. Gallium arsenide heterostructures;Handbook of Advanced Electronic and Photonic Materials and Devices;2001
3. Chapter 2 Gallium arsenide heterostructures;Processing and Properties of Compound Semiconductors;2001
4. GaAs metal‐semiconductor field‐effect transistor with extremely low resistance nonalloyed ohmic contacts using an InAs/GaAs superlattice;Applied Physics Letters;1989-08-21
5. Extremely low resistance nonalloyed ohmic contacts on GaAs using InAs/InGaAs and InAs/GaAs strained‐layer superlattices;Applied Physics Letters;1988-09-05
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