Author:
Torregiani C.,Maex K.,Benedetti A.,Bender H.,Van Houtte P.,Pawlak B. J.,Kittl J. A.
Subject
Physics and Astronomy (miscellaneous)
Reference14 articles.
1. Mechanically induced strain enhancement of metal–oxide–semiconductor field effect transistors
2. A 90-nm Logic Technology Featuring Strained-Silicon
3. Silicide-induced stress in Si: origin and consequences for MOS technologies
4. Nanometer scale characterisation of CoSi2 and NiSi induced strain in Si by convergent beam electron diffraction
5. C. Torregiani, J. Liu, B. Vandevelde, D. Degryse, M. J. Van Dal, A. Benedetti, A. Lauwers, and K. Maex, in Proceedings of the Fifth International Conference on Thermal and Mechanical Simulation and Experiments in Micro-Electronics and Micro-Systems, edited by L. J. Ernst, G. Q. Zhang, P. Rodgers, and O. de Saint Leger (Shaker, Maastricht, 2004), p. 61.
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