Comment on “A model for internal photoemission at high-k oxide/silicon energy barriers” [J. Appl. Phys.112, 064115 (2012)]
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4802674
Reference15 articles.
1. A model for internal photoemission at high-k oxide/silicon energy barriers
2. Interface Barrier Energy Determination from Voltage Dependence of Photoinjected Currents
3. Internal photoemission at interfaces of high-κ insulators with semiconductors and metals
4. Band alignment between (100)Si and complex rare earth∕transition metal oxides
5. Internal Photoemission Spectroscopy Methods
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5. Valence Band Profile in Two-Dimensional Silicon-Oxygen Superlattices Probed by Internal Photoemission;ECS Journal of Solid State Science and Technology;2016
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