Energy Band Alignment of a Monolayer MoS 2 with SiO 2 and Al 2 O 3 Insulators from Internal Photoemission-Reference-Cited by-同舟云学术

Energy Band Alignment of a Monolayer MoS 2 with SiO 2 and Al 2 O 3 Insulators from Internal Photoemission

Published:2019-01-15 Issue:8 Volume:216 Page:1800616
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Shlyakhov Ilya¹,Chai Jianwei²,Yang Ming²,Wang Shijie²,Afanas'ev V. V.¹,Houssa Michel¹,Stesmans Andre¹

Affiliation:

1. Department of Physics and AstronomyUniversity of LeuvenCelestijnenlaan 200DB‐3001 LeuvenBelgium

2. Institute of Materials Research and Engineering (IMRE)A*STAR (Agency for Science,Technology and Research)2 Fusionopolis WayInnovis#08‐03Singapore 138634

Funder

Flanders Innovation & Entrepreneurship 2Dfun

ERA-NET project

KU Leuven Internal Fund

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201800616

Reference44 articles.

1. Van der Waals heterostructures and devices

2. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

3. Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p–n Heterojunctions

4. Single-layer MoS2 transistors

5. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

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