Buried heterostructure laser fabricated using reactive ion etching and gas source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107408
Reference10 articles.
1. 1.5 μm GaInAsP/InP buried‐heterostructure laser diode fabricated by reactive ion etching using a mixture of ethane and hydrogen
2. Buried‐heterostructure lasers fabricated byinsituprocessing techniques
3. Buried heterostructure laser fabricated using three‐step gas source molecular beam epitaxy
4. Novel process for integration of optoelectronic devices using reactive ion etching without chlorinated gas
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Gas-source molecular beam epitaxial growth of low threshold current 1.3 μm lasers;Journal of Crystal Growth;1997-05
2. High-resolution depth monitoring of reactive ion etching of InP/InGaAs(P) MQWs using reflectance measurements;Semiconductor Science and Technology;1996-06-01
3. Low threshold current 1.3 [micro sign]m InAsP/InGaAsP lasers grown by gas-source molecular beam epitaxy;Electronics Letters;1996
4. Growth of GaSb / AlSb heterostructures on patterned substrates by molecular beam epitaxy;Journal of Crystal Growth;1994-10
5. Dry etched mesas for buried heterostructure InGaAsP/InP lasers using electron cyclotron resonance Cl2/CH4/H2/Ar discharges;Journal of Materials Science Materials in Electronics;1994-06
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