Buried heterostructure laser fabricated using three‐step gas source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105321
Reference9 articles.
1. Gas source molecular beam epitaxy of GaInAs(P): Gas sources, single quantum wells, superlattice p-i-n's and bipolar transistors
2. High performance DFB-MQW lasers at 1.5 μm grown by GSMBE
3. High-power, low-threshold BH lasers operating at 1.52 μm grown entirely by MOVPE
4. High frequency buried heterostructure 1.5 μm GaInAsP/InP lasers, grown entirely by metalorganic vapour phase epitaxy in two epitaxial growth steps
5. Chemical beam epitaxial selective growth of InP for laser fabrication
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. MOLECULAR BEAM EPITAXY WITH GASEOUS SOURCES;Integrated Optoelectronics;1995
2. Finite-element thermal model for buried-heterostructure diode lasers;Optical and Quantum Electronics;1994-02
3. Planarized growth of AlGaAs/GaAs heterostructures on patterned substrates by molecular beam epitaxy;Journal of Applied Physics;1993-08
4. Optoelectronic devices by gas source molecular beam epitaxy;Journal of Crystal Growth;1992-05
5. Buried heterostructure laser fabricated using reactive ion etching and gas source molecular beam epitaxy;Applied Physics Letters;1992-03-09
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