High frequency buried heterostructure 1.5 μm GaInAsP/InP lasers, grown entirely by metalorganic vapour phase epitaxy in two epitaxial growth steps
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19881012?crawler=true&mimetype=application/pdf
Reference6 articles.
Cited by 30 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Strained quaternary quantum well lasers for high temperature operation;Applied Physics Letters;1993-10-25
2. A modified metalorganic chemical vapor deposition chemistry for improved selective area regrowth;Journal of Crystal Growth;1993-07
3. High temperature characteristics of InGaAsP/InP laser structures;Applied Physics Letters;1993-05-10
4. Observation of growth patterns during atmospheric pressure metalorganic vapor phase epitaxy regrowth of InP around etched mesas;Journal of Crystal Growth;1993-05
5. Anisotropy and Lateral Homogeneity of InP-Mass Transport;Japanese Journal of Applied Physics;1992-08-15
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