Gas-source molecular beam epitaxial growth of low threshold current 1.3 μm lasers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. MOVPE growth of strained InAsP/InGaAsP quantum-well structures for low-threshold 1.3-μm lasers
2. High-power and high-efficiency 1.3 µm InAsP compressively-strained MQW lasers at high temperatures
3. Growth of 1.3 μm InAsP/InGaAsP laser structures by gas source molecular beam epitaxy
4. Low‐threshold 1.3‐μm wavelength, InGaAsP strained‐layer multiple quantum well lasers grown by gas source molecular beam epitaxy
5. Buried heterostructure laser fabricated using reactive ion etching and gas source molecular beam epitaxy
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Numerical study on gain and optical properties of AlGaInAs, InGaNAs, and InGaAsP material systems for 1.3-μm semiconductor lasers;Optics Communications;2007-07
2. Small-signal response of 1.3-/spl mu/m InAsP-InGaAsP quantum-well laser diodes obtained with a terahertz-bandwidth frequency comb;IEEE Journal of Quantum Electronics;2004-08
3. 1.3-/spl mu/m InAsP modulation-doped MQW lasers;IEEE Journal of Quantum Electronics;2000-06
4. Arsenic incorporation in InAsP/InP quantum wells;Journal of Electronic Materials;1999-10
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