Low‐threshold 1.3‐μm wavelength, InGaAsP strained‐layer multiple quantum well lasers grown by gas source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112192
Reference11 articles.
1. InGaAsP/InP multiple quantum wells grown by gas-source molecular beam epitaxy
2. High‐resolution x‐ray diffraction and transmission electron microscopy studies of InGaAs/InP superlattices grown by gas‐source molecular beam epitaxy
3. Strained quaternary GaInAsP quantum well lasee emitting at 1.5 μm grown by gas source molecular beam epitaxy
4. Band-structure engineering for low-threshold high-efficiency semiconductor lasers
5. Band structure engineering of semiconductor lasers for optical communications
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1. Organic semiconductors for device applications: current trends and future prospects;Journal of Polymer Engineering;2014-06-01
2. Molecular-beam epitaxy of phosphor-free 1.3 μm InAlGaAs multiple-quantum-well lasers on InP (100);Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007
3. The electro-optic properties of interdiffused InGaAs/InP quantum well structures;Journal of Applied Physics;2000-09-15
4. Ultrathin Organic Films Grown by Organic Molecular Beam Deposition and Related Techniques;Chemical Reviews;1997-10-01
5. Gas-source molecular beam epitaxial growth of low threshold current 1.3 μm lasers;Journal of Crystal Growth;1997-05
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