Metalorganic chemical vapor deposition of lead-free ferroelectric BiFeO3 films for memory applications-Reference-Cited by-同舟云学术

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Metalorganic chemical vapor deposition of lead-free ferroelectric BiFeO3 films for memory applications

Published:2005-09-05 Issue:10 Volume:87 Page:102903
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yang S. Y.,Zavaliche F.,Mohaddes-Ardabili L.,Vaithyanathan V.,Schlom D. G.,Lee Y. J.,Chu Y. H.,Cruz M. P.,Zhan Q.,Zhao T.,Ramesh R.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2041830

Reference13 articles.

1. Epitaxial-grade polycrystalline Pb(Zr,Ti)O3 film deposited at low temperature by pulsed-metalorganic chemical vapor deposition

2. Preparation of SrBi2Ta2O9 Thin Films Consisting of Uniform Grains at Low Temperature by Metalorganic Chemical Vapor Deposition

3. Ferroelectric properties of Pb(Zr,Ti)O3 thin films prepared by low-temperature MOCVD using PbTiO3 seeds

4. Epitaxial BiFeO 3 Multiferroic Thin Film Heterostructures

5. Epitaxial BiFeO3 thin films on Si

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