Epitaxial BiFeO 3 Multiferroic Thin Film Heterostructures

Author:

Wang J.1,Neaton J. B.2,Zheng H.1,Nagarajan V.1,Ogale S. B.3,Liu B.1,Viehland D.4,Vaithyanathan V.5,Schlom D. G.5,Waghmare U. V.6,Spaldin N. A.7,Rabe K. M.2,Wuttig M.1,Ramesh R.3

Affiliation:

1. Department of Materials Science and Engineering, University of Maryland, College Park, MD 20742, USA.

2. Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA.

3. Department of Physics, University of Maryland, College Park, MD 20742, USA.

4. Department of Materials Science and Engineering, Virginia Polytechnic Institute, Blacksburg, VA 24061, USA.

5. Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802–5055, USA.

6. J. Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560 064, India.

7. Materials Department, University of California, Santa Barbara, CA 94805, USA.

Abstract

Enhancement of polarization and related properties in heteroepitaxially constrained thin films of the ferroelectromagnet, BiFeO 3 , is reported. Structure analysis indicates that the crystal structure of film is monoclinic in contrast to bulk, which is rhombohedral. The films display a room-temperature spontaneous polarization (50 to 60 microcoulombs per square centimeter) almost an order of magnitude higher than that of the bulk (6.1 microcoulombs per square centimeter). The observed enhancement is corroborated by first-principles calculations and found to originate from a high sensitivity of the polarization to small changes in lattice parameters. The films also exhibit enhanced thickness-dependent magnetism compared with the bulk. These enhanced and combined functional responses in thin film form present an opportunity to create and implement thin film devices that actively couple the magnetic and ferroelectric order parameters.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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