Effects of Non-Stoichiometry and Strain on Ferroelectric Properties of CVD-Grown Bismuth Ferrite Films-Reference-Cited by-同舟云学术

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Effects of Non-Stoichiometry and Strain on Ferroelectric Properties of CVD-Grown Bismuth Ferrite Films

Published:2024-08-14 Issue: Volume: Page:
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Acharya Mahendra¹^ORCID,Joshi Chhatra Raj²^ORCID,Plombon John Joseph³,Gupta Arunava¹⁴^ORCID

Affiliation:

1. Department of Chemistry and Biochemistry, The University of Alabama, Tuscaloosa, Alabama 35487, United States

2. Department of Physics and Astronomy, The University of Alabama, Tuscaloosa, Alabama 35487, United States

3. Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States

4. Department of Chemical and NanoEngineering, University of California San Diego, La Jolla, California 92093, United States

Funder

Intel Corporation

Semiconductor Research Corporation

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.4c00553

Reference73 articles.

1. Effect of kinetic growth parameters on leakage current and ferroelectric behavior of BiFeO3 thin films

2. The role of SrRuO3 bottom layer in strain relaxation of BiFeO3 thin films deposited on lattice mismatched substrates

3. Spintronic devices for energy-efficient data storage and energy harvesting

4. Epitaxial BiFeO 3 Multiferroic Thin Film Heterostructures

5. Multiferroics and magnetoelectrics: thin films and nanostructures

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