Ferroelectric properties of Pb(Zr,Ti)O3 thin films prepared by low-temperature MOCVD using PbTiO3 seeds

Author:

Shimizu M.,Okaniwa M.,Fujisawa H.,Niu H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Ceramics and Composites

Reference14 articles.

1. A novel metal-ferroelectric insulator-semiconductor (MFS) capacitor using PZT/SrTiO3 layer insulator;Kashihara;VLSI Tech. Symp. Tech. Dig.,1993

2. Growth and characterization of ferroelectric Pb(Zr,Ti)O3 thin films by MOCVD using a 6 inch single wafer CVD system;Shimizu;Mater. Res. Soc. Symp. Proc,1993

3. Capacitor-on-metal/via-stacked-plug (CMVP) memory cell for 0.25μm CMOS embedded FeRAM;Amanuma;Int. Electron Device Meet. Tech. Dig.,1998

4. Characterization of 0.25μm ferroelectric nonvolatile memory with a Pb(Zr,Ti)O3 capacitor on a metal/via-stacked plug;Amanuma;Jpn. J. Appl. Phys.,2000

5. Plasama-enhanced metalorganic chemical vapor deposition of BaTiO3 films;Van Buskirk;J. Vac. Sci. & Technol.,1992

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